Preliminary Technical Information
TrenchMV TM
Power MOSFET
IXTH180N10T
IXTQ180N10T
V DSS
I D25
R DS(on)
= 100 V
= 180 A
≤ 6.4 m ?
N-Channel Enhancement Mode
Avalanche Rated
TO-247 (IXTH)
Symbol
V DSS
V DGR
Test Conditions
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M ?
Maximum Ratings
100 V
100 V
G
D
S
(TAB)
V GSM
I D25
I LRMS
I DM
I AR
E AS
Transient
T C = 25 ° C
Lead Current Limit, RMS
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
± 30
180
75
450
25
750
V
A
A
A
A
mJ
TO-3P (IXTQ)
dv/dt
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
T J ≤ 175 ° C, R G = 3.3 ?
3
V/ns
G
D
S
(TAB)
P D
T J
T JM
T stg
T C = 25 ° C
480
-55 ... +175
175
-55 ... +175
W
° C
° C
° C
G = Gate D = Drain
S = Source TAB = Drain
Features
Ultra-low On Resistance
T L
T SOLD
M d
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque
300 ° C
260 ° C
1.13 / 10 Nm/lb.in.
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Weight
TO-3P
TO-247
5.5
6
g
g
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Applications
Automotive
BV DSS
V GS = 0 V, I D = 250 μ A
100
V
- Motor Drives
- 42V Power Bus
V GS(th)
I GSS
I DSS
R DS(on)
V DS = V GS , I D = 250 μ A
V GS = ± 20 V, V DS = 0 V
V DS = V DSS
V GS = 0 V T J = 150 ° C
V GS = 10 V, I D = 25 A, Notes 1, 2
2.5
5.4
4.5
± 200
5
250
6.4
V
nA
μ A
μ A
m ?
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Current Switching
Applications
High Voltage Synchronous Recifier
? 2006 IXYS CORPORATION All rights reserved
DS99712 (11/06)
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相关代理商/技术参数
IXTH182N055T 功能描述:MOSFET 182 Amps 55V 4.4 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH18N65 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 18A I(D) | TO-218VAR
IXTH19N45 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 19A I(D) | TO-218VAR
IXTH19N50 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 19A I(D) | TO-218VAR
IXTH19P15 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 19A I(D) | TO-218VAR
IXTH19P20 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 19A I(D) | TO-218VAR
IXTH1N100 功能描述:MOSFET 0.1 Amps 1000V 80 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH1N250 功能描述:MOSFET 1 Amps 2500V 40 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube